[19p-D103-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[19p-D103-10] Creation of coler centers in SiC pin dildes using proton beam writing

〇(B)Yoji Chiba^1,2, Hiroki Tsunemi^1,2, Tomoya Honda^1,2, Takahiro Makino², Shin-ichiro Sato², Naoto Yamada², Takahiro Sato², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST)

Keywords:Silicon Carbide, Proton Beam Writing, Single Photon Sources

I’m going to give a talk on a vacancy related color center (V_Si) in a Silicon Carbide (SiC) semiconductor, which is promising for quantum cryptographic communication and quantum sensing technologies. In order to electrically control luminescence of V_Si, we designed and made a SiC pin diode and created V_Si in it using proton beam writing. I will also discuss about the possibility of controlling luminescence of V_Si using the pin diode.