[19p-D103-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[19p-D103-16] Comparison of Activation Energies of Hall Coefficient and Resistivity in Heavily Al-doped 4H-SiC

〇Rinya Nishihata¹, Akinobu Takeshita¹, Tatsuya Imamura¹, Kota Takano¹, Kazuya Okuda¹, Atsuki Hidaka¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida², Hajime Okumura² (1.OECU, 2.AIST)

Keywords:Heavily Al-doped 4H-SiC, Resistivity, Hall coefficient

To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to reduce the resistance in thick p⁺-type SiC substrates. In heavily Al-doped 4H-SiC whose conductions are a band conduction at high temperatures and a nearest-neighbor hopping (NNH) conduction at low temperatures, the temperature at which the inversion of the Hall coefficient occurs increases with increasing the Al concentration, and then the inversion occurs in the band conduction region. Moreover, the activation energy of the Hall coefficient is in good agreement with the activation energy of the resistivity in the band or NHH conduction region.