[19p-E202-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors: How far can we control the defects? Advanced characterization and functional exploration

[19p-E202-4] Study of carrier trappings by point defects in group-III nitrides by means of positron annihilation

〇Akira Uedono¹, Ishibashi Shouji², Sumiya Masatomo³ (1.Univ. of Tsukuba, 2.AIST, 3.NIMS)

Keywords:group-III nitride, vacancy-type defect, positron annihilation

Positron annihilation is a non-destructive technique to characterize vacancy-type defects in materials. Vacancy-type defects in GaN were probed using monoenergetic positron beams. Measurements of Doppler broadening spectra under light illumination indicated that the major defect species in the GaN layers was a Ga vacancy coupled with nitrogen vacancies. We report the results of an electron trapping by the vacancies in GaN.