Symposium (Oral)

[19p-E202-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors: How far can we control the defects? Advanced characterization and functional exploration

Mon. Mar 19, 2018 1:30 PM - 5:30 PM E202 (57-202)

Akira Sakai(Osaka Univ.), Akira Uedono(Tsukuba Univ.)

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1:30 PM - 1:40 PM

[19p-E202-1] Introduction for science of singularity structure in nitride semiconductors

〇Hiroshi Fujioka¹ (1.The Univ. of Tokyo)

1:40 PM - 2:10 PM

[19p-E202-2] New development of narrow-band, wavelength ultra-stable red light-emitting diodes with Eu-doped GaN: Control of singularity and photon fields

〇Yasufumi Fujiwara¹, Tomohiro Inaba¹, Wanxin Zhu¹, Jun Tatebayashi¹ (1.Osaka Univ.)

2:10 PM - 2:40 PM

[19p-E202-3] Structural Defects and Composition Fluctuation of GaN-based Alloy Semiconductor

〇Shigetaka Tomiya¹, Yuya Kanitani¹ (1.Sony)

2:40 PM - 3:10 PM

[19p-E202-4] Study of carrier trappings by point defects in group-III nitrides by means of positron annihilation

〇Akira Uedono¹, Ishibashi Shouji², Sumiya Masatomo³ (1.Univ. of Tsukuba, 2.AIST, 3.NIMS)

3:30 PM - 4:00 PM

[19p-E202-5] GaN crystal growth technique by Na flux method for reducing dislocation

〇Yusuke Mori¹, Masayuki Imanishi¹, Mamoru Imade¹, Masashi Yoshimura^1,2 (1.Osaka Univ., 2.ILE, Osaka Univ.)

4:00 PM - 4:30 PM

[19p-E202-6] Three-Dimensional Observation of Dislocation in GaN and the Effect of Dilsocation in Power Devices

〇Atsushi Tanaka^1,2, Shigeyoshi Usami³, Yuto Ando³, Kentaro Nagamatsu¹, Maki Kushimoto³, Manato Deki¹, Syugo Nitta¹, Yoshio Honda¹, Hiroshi Amano^1,2,4,5 (1.Nagoya Univ. IMaSS, 2.NIMS, 3.Dept. of Electronics, Nagoya Univ., 4.Nagoya Univ. ARC, 5.NU VBL)

4:30 PM - 5:00 PM

[19p-E202-7] Electron Microscpic Study on Multiscale Defects in Wide Gap Materials

〇Takanori Kiguchi¹, Takahisa Shiraishi¹, Toyohiko J. Konno¹, Tomoyuki Tanikawa¹ (1.Tohoku Univ.)

5:00 PM - 5:30 PM

[19p-E202-8] Three-dimensional Analysis of Defect-related Singularity Structures in Nitride Semiconductor Materials

〇Akira Sakai¹, Kazuki Shida¹, Shotaro Takeuchi¹, Tetsuya Tohei¹, Yasuhiko Imai², Shigeru Kimura² (1.Osaka Univ., 2.JASRI)

Sessions

Symposium » Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors: How far can we control the defects? Advanced characterization and functional exploration