[19p-E202-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors: How far can we control the defects? Advanced characterization and functional exploration

[19p-E202-2] New development of narrow-band, wavelength ultra-stable red light-emitting diodes with Eu-doped GaN: Control of singularity and photon fields

〇Yasufumi Fujiwara¹, Tomohiro Inaba¹, Wanxin Zhu¹, Jun Tatebayashi¹ (1.Osaka Univ.)

Keywords:rare-earth doped semiconductor, europium, light-emitting diode

A narrow-band, wavelength ultra-stable red light-emitting diode (LED) using Eu-doped GaN is very attractive for the development of a small-size high-resolution LED display. This presentation is on strategies for improved light output power from the red LED. Energy transfer efficiency to Eu ions from the GaN host depended on local structures around Eu ions. The coexistence of donor- and acceptor-like impurities/defects in the vicinity of Eu ions made the energy transfer drastically effective. On the other hands, the control of photon fields using surface plasmons and microcavities was also found to be useful for more enhanced Eu intensity.