The 65h JSAP Spring Meeting, 2018

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[19p-F202-1~16] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 19, 2018 1:45 PM - 6:15 PM F202 (61-202)

Takashi Suemasu(Univ. of Tsukuba), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

4:30 PM - 4:45 PM

[19p-F202-11] Preparation of poly-crystalline BaSi2 thin-films on Si substrate by helicon-wave plasma sputtering

〇Satoshi Matsuno1, Ryota Takabe1, Masami Mesuda2, Hideto Kuramochi2, Kaoru Toko1, Takashi Suemasu1 (1.Tsukuba Univ., 2.Tosoh corp.)

Keywords:semiconductor, sputtering