The 65h JSAP Spring Meeting, 2018

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[19p-F202-1~16] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 19, 2018 1:45 PM - 6:15 PM F202 (61-202)

Takashi Suemasu(Univ. of Tsukuba), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

5:00 PM - 5:15 PM

[19p-F202-12] Ruthenium−Silicide Formation at Ru/SiOx Interfaces by Synchrotron Radiation

〇Shuhei Ichikawa1, Daiki Furukawa2, Kazuhisa Sato1,2, Masaki Imamura3, Kazutoshi Takahashi3, Hidehiro Yasuda1,2 (1.Research Center for UHVEM, Osaka Univ., 2.Osaka Univ., 3.Saga Univ.)

Keywords:Semiconducting silicides, Synchrotron radiation