[19p-F202-1~16] 13.2 Exploratory Materials, Physical Properties, Devices

[19p-F202-4] Si-doping effect on diluted magnetic semiconductro superlattice GaGdAs/GaAs

〇Hayato Miyagawa¹, Yoshiyuki Onishi¹, Shyun Koshiba², Naoshi Takahashi², Yoshihiko Inada³ (1.Facl. Eng. Kagawa Univ., 2.Facl. Edu. Kagawa Univ., 3.Okayama Univ.)

Keywords:diluted magnetic semiconductor, Gadolinium, superlattice

We fabricated diluted magnetic semiconductor superlattice GaGdAs/GaAs by means of MBE(Molecular Beam Epitaxy) technique, doping Si as n-type carrier, and analyzed the crystal structure and measured electric and magnetic properties. Cross-sectional TEM images show that the crystal defect and unevenness of interface of superlattice increase with increasing Si cell temperature. The carrier-induced ferromagnetic behavior was observed in the sample grown with the Si cell temperature 1250 degree C, which makes the most enhanced carrier density and the magnetization more than 40 emu/cc.