2:45 PM - 3:00 PM
▼ [19p-F202-5] Transparent Amorphous p-type Semiconductor with High Mobility (~9 cm2/Vs), Cu-Sn-I: Utilization of I 5p orbital as Pseudo Extended s-orbital
Keywords:p-type transparent amorphous semiconductor, Solution-processed thin films
Transparent amorphous semiconductors (TAS) have received much attention owing to their low-temperature process, high transparency, large carrier mobility, and so on. However, TAS reported to date is restricted to only n-type material. Conventional n-type TAS was achieved utilizing the nature of large overlap between spatially spread vacant metal s-orbitals constituting conduction band minimum. Similarly, p-type TAS would be realized if large s-orbitals constitute valence band maximum. However, it is quite difficult to employ cation’s occupied s-orbital in amorphous materials. Therefore, we propose a different material design concept for p-type TAS that large p-orbital plays a role of pseudo extended s-orbital like conventional n-type TAS. Consequently, a very large Hall mobility of ~9cm2V-1s-1 was obtained for the amorphous CuSnI thin film fabricated by solution-process. This work demonstrates a new approach to the p-type TAS with high performance. It is expected that this result will contribute to new p-type TASs and their applications with conventional n-type TAS, e.g. flexible complementary circuits. More details including electrical properties and electronic structures is presented at the meeting.