[19p-G203-1~7] ゲルマニウムはシリコンを代替するのか？

▲ [19p-G203-1] Why don’t you enjoy Ge CMOS more?

〇Akira Toriumi¹ (1.Univ. Tokyo)

キーワード：Germanium, CMOS

Ge used to be intensively investigated before 1960. Why Ge was beaten by Si? There were a couple of reasons in terms of (i) junction leakage, (ii) material volume, (iii) gate stack challenges, etc. Now we are tackling with Ge again. We have to understand merits and demerits of Ge, and to differentiate between intrinsic challenges and optimization issues. The mobility in bulk Ge is usually addressed as the big merit of Ge, however, there is a big discrepancy of the mobility between in the bulk and at the interface even in Si. To enjoy the merit, it is beyond question that the interface quality control is the key. Since interface issues will be discussed in another symposium, scaled device potential inherent in Ge is more focused.