[19p-G203-1~7] ゲルマニウムはシリコンを代替するのか？

▲ [19p-G203-4] Prospects and Challenges for Ge MOSFETs

〇Shinichi Takagi¹、Kwang-Won Jo¹、Wu-Kang Kim¹、Mengnan Ke¹、Kimihiko Kato¹、Mitsuru Takenaka¹ (1.Univ. Tokyo)

キーワード：Germanium, MOSFET, mobility

Ge channel MOSFETs have recently been developed over many years as a technology booster in LSI CMOS scaling. In this presentation, the expected device structures, challenges for real use and viable solutions for the challenges are addressed with emphasis on the technologies of Ge-On-Insulator channel formation and Ge gate stacks.