2018年第65回応用物理学会春季学術講演会

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13 半導体 » 13.8 光物性・発光デバイス

[19p-G204-1~8] 13.8 光物性・発光デバイス

2018年3月19日(月) 13:15 〜 15:15 G204 (63-204)

七井 靖(青学大)

14:00 〜 14:15

[19p-G204-4] Effect of Mn-doping on the properties of Mn, Mg-codoped γ-AlON green phosphor

〇(P)Yujin Cho1、Takashi Takeda1、Kohsei Takahashi1、Takashi Kimura1、Rong-jun Xie1、Naoto Hirosaki1、Takashi Sekiguchi1 (1.NIMS)

キーワード:Mn, Mg-doped AlON, Cathodoluminescence

Recently, narrow-band emitting phosphors attract particular attention for the application in white LED backlight in 8K-LCD TV, mobile phone, or tablet PCs. γ-AlON: Mg2+, Mn2+ is a promising candidate showing high color purity in green, small thermal quenching and high internal quantum efficiency under blue light irradiation [1, 2]. However, γ-AlON:Mg2+, Mn2+ has a quite low absorption efficiency due to spin-forbidden transition of 3d5 electrons in Mn2+. It is necessary to improve luminescence property to be used in w-LED application.In this study, we varied Mn concentration in γ-AlON:Mg2+, Mn2+ phosphors. The influence of Mn was investigated using PL, CS-SEM, CL, EPMA, XRD, ICP. The PL result shows that Mn2+ gives emission band centered at 512nm with 33nm FWHM. The intensity is gradually increased until 30 mol% Mn and then decreased due to the secondary phase generation (Fig. 1). Cross-sectional SEM images indicate that many small voids exist inside of the phosphor at 1mol% of Mn, and then their size grows with Mn doping to 30 mol% (Fig. 2). We consider the huge voids are attributed to the evaporation of Mn during sintering at high temperature. It should be noted that the concentration quenching of γ-AlON:Mg2+, Mn2+ phosphor is weak comparing with other rare-earth doped phosphors.