The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[19p-G204-1~8] 13.8 Optical properties and light-emitting devices

Mon. Mar 19, 2018 1:15 PM - 3:15 PM G204 (63-204)

Yasushi Nanai(Aoyama Univ.)

2:45 PM - 3:00 PM

[19p-G204-7] Characterization of high temperature degradation mechanism of a red phosphor, CaAlSiN3:Eu

Masatsugu Oishi1,2, Shohei Shiomi3, Takashi Yamamoto1, Tomoyuki Ueki1, Yoichiro Kai2, Shigefusa Chichibu4, Aiko Takatori2, Kazunobu Kojima4,2 (1.Tokushima Univ., 2.Yawarakana Hikari Project, 3.Kyoto Municipal Institute of Industrial Technology and Culture, 4.IMRAM, Tohoku Univ.)

Keywords:a red nitride phosphor, High temperature property

We have found the thermal degradation mechanism of a red phosphor CaAlSiN3:Eu (CASN) at the elevated temperatures by directly evaluating the electronic structure of the elimination center of Eu2+ ions. The evolution of N2 at the elevated temperature caused EuN4 tetrahedral symmetry distortion and it caused the irreversible changes of the electronic structure of Eu2+ ions. Further distortion resulted in oxidation to Eu3+ states and the photoluminescence property was lost.