[19p-P11-1~31] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-P11-13] Dry etching for ε-Ga₂O₃ thin films grown on GaN template

〇Nobutaka Miyauchi¹, Masayuki Nakamura², Takayuki Kobayashi², Hiroyuki Nishinaka¹, Daisuke Tahara¹, Shota Morimoto¹, Shin-ichi Motoyama², Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech, 2.SAMCO Inc.)

Keywords:Gallium oxide, Dry etching