[19p-P11-1~31] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-P11-16] TEM observation of alpha-Ga2O3 films grown on m-plane sapphire substrates

〇Kazuaki Akaiwa¹, Katsuya Ota¹, Takahito Sekiyama¹, Tomoki Abe¹, Takashi Shinohe², Kunio Ichino¹ (1.Tottori Univ., 2.FLOSFIA)

Keywords:Gallium Oxide, TEM Analysis