[19p-P11-1~31] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [19p-P11-21] Effect of Potential Barrier in the Thermoelectric Properties of the Amorphous InGaZnO Thin Film

〇Daiki Senaha¹, Mutsunori Uenuma¹, Jenichi Felizco¹, Kenta Umeda¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹, Hideaki Adachi¹ (1.NAIST)

Keywords:Thermoelectric, Oxide semiconductor, Fabrication process

We have studied amorphous InGaZnO (a-IGZO) as a thermoelectric material.Fabrication conditions i.e. oxygen flow ratio, RF power, target-substrate distance, and deposition pressure during sputtering, and temperature during annealing were varied.As a result, Seebeck coefficients and conduction mechanism showed valid differences.The difference of carrier concentration cannot explain this phenomenon.The temperature dependence of electrical conductivity and Hall mobility suggests that the reason is the difference of potential barrier in current band which derived from randomness of amorphous structure.In this presentation, the effect of potential barrier in the thermoelectric properties will be discussed.