[19p-P11-1~31] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-P11-22] Evaluation of Schottky characteristics to InGaZnO/AgO_X oxide hetero interface

〇(D)Yusaku Magari¹, Shinsuke Hashimoto¹, Kenichiro Hamada¹, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech., 2.Research Institute)

Keywords:Oxide semiconductor, InGaZnO, Schottky diode

We demonstrated good device characteristics of metal-semiconductor field-effect transistor (MES-FET) with mist chemical vapor deposited In-Ga-Zn-O channel and sputtered AgO_X Schottky gate. In this research, we aim to fabricate high-performance MES-FET in low temperature process by using room temperature sputtering method for IGZO film deposition. In this report, we report the influence of oxygen partial pressure on Schottky characteristics during AgO_X film deposition in IGZO/AgO_X heterojunction. Moreover, we will present device characteristics of MES-FET with fabricated at 150 ℃.