[19p-P11-1~31] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-P11-23] Mobility improvement and its reliability in oxide TFTs with In–W–Zn–O

〇(DC)Daichi Koretomo¹, Yuta Hashimoto¹, Syuhei Hamada¹, Miki Miyanaga², Mamoru Furuta¹ (1.Kochi Univ. of Tech., 2.Sumitomo Elec. Inds. Ltd.)

Keywords:metal oxide semiconductor, thin-film-transistor, high mobility

Since an amorphous In–Ga–Zn–O thin-film transistor (a-IGZO TFT) was reported by Nomura et al. in 2004, the a-IGZO TFT have received considerable attention for next-generation flat panel displays (FPDs), owing to high-mobility(>10 cm²/Vs), compatibility with the conventional production and manufacturability of large area uniformity. However, requirement of more higher-mobility has raised for the next-generation FPDs moves toward higher-definition, higher-frame rate and higher-brightness of organic light-emitting diode displays.
In this research, mobility improvement and its reliability in oxide TFTs with In–W–Zn–O which is Indium oxide based semiconductor containing W and Zn was investigated. We found that characteristics of the IWZO TFT was exhibited mobility of over 30 cm²/Vs, S value of 0.1 V/dec. and V_th of -0.6 V.