[19p-P11-1~31] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-P11-26] Nitrogen doping to ZnO films using NO gas excited on Ir catalyst surface

〇Yuki Adachi¹, Shotaro Ono¹, Abdul Manaf Hashim², Kanji Yasui¹ (1.NUT, 2.MJIIT)

Keywords:catalytic reaction, ZnO, nitrogen doping

Attempting to the nitrogen doping to ZnO films grown by a catalytic reaction assisted CVD using high-energy H₂O molecules, nitrogen radicals generated on heated Ir wire surface were supplied during the film growth. As a result of the measurement of X-ray photoelectron spectroscopy, the proportion of Zn-N component in N-1s peak for the ZnO film grown with N-radicals was greater than that for the ZnO film without N-radicals.