[19p-P4-1~15] 6.2 Carbon-based thin films

[19p-P4-10] Development of Silicon- and Carbon-based p-Type Semiconductor Thin Films by Thermal Diffusion Method for Solar Cells

〇Hiroshi Naragino¹, Yuta Shimizu¹, Yuta Waki¹, Yu Saitoh², Kensuke Honda¹ (1.2Grad. Sch. Sci. Tech. Innov., Yamaguchi Univ., 2.Fac. Sci., Yamaguchi Univ.)

Keywords:Amorphous Silicon Carbide Thin Film, Solar Cell, Thermal Diffusion Method

In this study, p-type boron-doped amorphous silicon carbide (a-Si_xC_1-x, x < 0.5) thin films were fabricated by thermal diffusion method for solar cells. Boron atoms were incorporated into the film and carrier density was increased by spin coating of trimethyl borate (B(OCH₃)₃) on undoped a-Si_xC_1-x film and annealing. Conversion efficiency of heterojunction solar cells comprising B-doped a-Si_xC_1-x films and n-type Si substrate was calculated to be 0.761 % measured under irradiation (AM 1.5).