[19p-P4-1~15] 6.2 Carbon-based thin films

[19p-P4-3] Synthesis of graphitic carbon nitride thin films under a vacuum atmosphere

〇(B)Kazushi Yasuda¹, Hiroaki Aoyama¹, Hitoe Habuchi¹, Hirohumi Takikawa² (1.Natl. Inst. Technol., Gifu Coll., 2.Toyohashi Univ. Technol.)

Keywords:thin film, carbon nitride, semiconductor

Graphitic carbon nitride (g-C₃N₄) has properties of a semiconductor with an energy band gap of about 2.7 eV and can be expected to be applied as an optical semiconductor device material. We prepared the source material by heating the g-C₃N₄ powder in air, synthesized g-C₃N₄ thin films in vacuum atmosphere and evaluated it. In the lecture, we report on the result of synthesizing by changing temperature condition and its evaluation.