[19p-P5-1~39] 6.3 Oxide electronics

[19p-P5-6] Observation of Metal-insulator Transition of VO₂ Thin Film Deposited on YSZ Substrate

Takumi Minohara¹, Tomohiro Tannno¹, Makoto Minohara², Koji Horiba², Hioshi Kumigashira², 〇Tohru Higuchi¹ (1.Tokyo Univ. Sci., 2.PF, KEK)

Keywords:VO2 thin film

We have prepared the b-axis oriented VO₂ thin film on YSZ substrate by RF magnetron sputtering. The transition temperature depends on the lattice constant of b-axis. The V³⁺ state of metal phase is higher than that of insulator phase. This contributes to the V-O-V bond length by changing the lattice constant of b-axis.