2018年第65回応用物理学会春季学術講演会

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6 薄膜・表面 » 6.4 薄膜新材料

[19p-P6-1~17] 6.4 薄膜新材料

2018年3月19日(月) 13:30 〜 15:30 P6 (ベルサール高田馬場)

13:30 〜 15:30

[19p-P6-12] The influence of Si doping on inversing the polarity of aluminum nitride thin films

Sri Ayu Anggraini1、Masato Uehara1、Hiroshi Yamada1、Morito Akiyama1 (1.AIST)

キーワード:piezoelectric, nitride, polarity

Aluminun nitride (AlN) in thin film form has been a widely-used material for bulk acoustic wave (BAW) resonator, owing to its stability at high temperature, decent piezoelectric response (d33) and high acoustic velocity. The performance of AlN relies heavily on structure of the thin film, particularly whether it grown properly in c-axis orientation on the substrate. In general, a c-axis oriented wurzite structure AlN is either Al-polar-type or N-polar-type [1]. It has been reported that stacking the Al-polar-type thin film with the N-polar-type-thin film could promote higher frequency BAW resonator [2]. Since demand for high performance BAW resonator and filter raise with the ever-growing market of wireless telecommunication devices, controlling the polarity of AlN thin film become one of the important routes in improving the performance of a device. In this study, we introduce the use of silicone (Si) as a dopant that could promote the inversion of AlN polarity without degrading the piezoelectric response (d33). Addition of 1 at.% of Si is sufficient to inverse the polarity from positive to negative without massively reducing the magnitude of the piezoelectric response. The piezoelectric response of AlN thin film is 6.9 pC/N, while that of Si0.03Al0.97N was found to be -6.2 pC/N.
REFERENCES
[1] M. Suzuki, T. Yanigatani, H. Odagawa, Appl. Phys. Lett., 104 (2013) 172905.
[2] T. Mizuno, K. Mizuno, Y. Aida, A. Honda, M. Akiyama, T. Nagase, M. Kobayashi, Transducer 2017, DOI: 10.1109/TRANSDUCERS.2017.7994440