The 65h JSAP Spring Meeting, 2018

Presentation information

Poster presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[19p-P9-1~20] 13.8 Optical properties and light-emitting devices

Mon. Mar 19, 2018 4:00 PM - 6:00 PM P9 (P)

4:00 PM - 6:00 PM

[19p-P9-17] Analyses based on one-dimensional random walk for the long lasting phosphorescence (LLP) in Mn2+ ions doped divalent metal phosphate

Kai Ikegaya1, Kazuteru Shinozaki1, Shigeki Yamada1 (1.Yokohama City Univ.)

Keywords:long lasting phosphorescence, one-dimensional random walk, divalent manganese ion

A mechanism of long lasting phosphorescence (LLP) has been discussed mainly for band structure. Although Mn2+ ions doped Zn3(PO4)2 have a band gap of about 6.9 eV, red LLP was observed by using excitation at 4.9 eV. Thus, it was thought that the LLP is not able to be applied for band structure. For that reason, we applied one-dimensional random walk model to the LLP without band structure. As a result, we succeeded in reproducing experimental LLP intensity change in time for Mn2+ ions doped Zn3(PO4)2 using the simulation.