[20a-A204-1~10] 12.3 Functional Materials and Novel Devices

△ [20a-A204-8] Preparation of high-quality Bi₂S₃ thin film by novel solution process and photoresponse

〇(M2)Ryosuke Nishikubo¹, Akinori Saeki^1,2 (1.Osaka Univ., 2.JST-PRESTO)

Keywords:compound semiconductor, optoelectronics, bismuth

It was found that Bi₂S₃ has extremely high transient-photoconductivity from time-resolved-microwave-conductivity (TRMC) measurement. Then, new fabrication process of Bi₂S₃ thin film (chemical-assisted-spincoat-crystallization : CASC process) was established, which achieved extremely high photoconductivity. The obtained Bi₂S₃ thin film by CASC process has compared with the Bi₂S₃ thin films fabricated by other previous methods, P3HT, and organic-inorganic hybrid perovskite. In this comparison, Bi₂S₃ thin film fabricated by CASC process has shown the much highest photoconductance and photoresponse ability. Investigation of physical properties have also been done to clarify carrier transfer properties in both case of short-range and long-range. These works can be applied for new Bi₂S₃-based photoresistor as substitute for CdS photoresistor.