[20a-A304-1~12] 2.2 Detection systems

[20a-A304-4] Evaluation of α- and β-SiAlON scintillators by ion-beam-induced luminescence analysis

〇Wataru Kada¹, Ivan Sudic², Natko Skukan², Junichi Susaki³, Suzuya Yamada³, Takahiro Sekine¹, Kenta Miura¹, Takahiro Satoh⁴, Masashi Koka⁵, Naoto Yamada⁴, Tomihiro Kamiya¹, Milko Jaksic², Osamu Hanaizumi¹ (1.Gunma University, 2.RBI, 3.Denka Co. Ltd, 4.TARRI, QST, 5.Beam Operation Ltd)

Keywords:IBIL, SiAlON, Temperature Resistant

In this research, ion beam induced luminescence (IBIL) measurement for SiAlON phosphor was demonstrated with an aim of developing a scintillator that operates under harsh and high temperature environments. House-made temperature controller was installed at the end terminal of a focused ion beam irradiation system and IBIL from SiAlON scintillator under beam irradiation was measured for each temperature. IBIL obtained from β-SiAlON (MW 540 H) sample maintained approximately half value of IBIL intensity even at about 773 K comparing to that of original obtained at room temperature. According to this result, we confirmed that SiAlON scintillator could be used at high temperature environment.