[20a-B303-1~11] 7.2 Applications and technologies of electron beams

△ [20a-B303-11] Evaluation of HPPMS process with Kr discharge gas
for the fabrication of Spindt emitter cathod

〇Hyuga Taniguchi¹, Takeo Nakano¹, Kei Oya¹, Masayoshi Nagao², Hisashi Ohsaki², Katsuhisa Murakami² (1.Seikei Univ., 2.AIST.)

Keywords:sputtering, Spindt-type emitter

Spindt type emitter is a kind of vacuum electron sources prepared by semiconductor manufacturing technologies. On its fabrication, microcavities each of which has a hole on its ceiling are prepared, and an emitter material is deposited through this hole inside of the cavities. In our previous study, Mo was deposited by using a high power pulsed magnetron sputtering technique and the condition to obtain the optimum emitter shape (low gas pressure and modest sheath voltage) was identified. However, this condition also brought the strong compressive stress into the deposited Mo layers, and resulted in the unpredictable delamination of the layers and the instability of the preparation process. In the low gas pressure sputtering of heavy atomic mass materials, high-energy reflecting neutrals is known as one of the causes of the compressive stress. In this study, therefore, we have tried to use Kr as a discharge gas instead of Ar. Kr has larger atomic mass and is considered to alleviate the effect of high-energy reflecting neutrals. The deposited Mo films by the Kr process were proved to have smaller compressive stress than Ar cases. We will show the result of Spindt type emitter preparation using Kr process in the presentation.