[20a-D102-1~11] 12.4 有機EL・トランジスタ

▲ [20a-D102-5] Charge Accumulations in OFET Observed by SFG Spectroscopy

〇(PC)Haiya Yang¹、Masato Miyashita²、Takayuki Miyamae¹ (1.AIST、2.ADMAT)

キーワード：OFET, charge accumulation, SFG

Charges accumulated at the semiconductor/insulator interface of a top-contacted OFET with a channel length/width of 1000μm/1000μm while applying a negative gate voltage is first visualized by electric-field induced SFG spectroscopy. It is found after applying a gate voltage, the charges are accumulated not only inside the channel, but also outside the channel of the OFET and the charges are uniformly distributed on the semiconductor/insulator interface