The interface nitridation process by high temperature annealing in N<sub>2</sub> ambient for insulator on Si face SiC and its effect on defect reduction

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Tue. Mar 20, 2018 9:00 AM - 12:00 PM D103 (56-103)

11:30 AM - 11:45 AM

〇Shunsuke Asaba¹, Toshihide Ito¹, Shigeto Fukatsu¹, Yukio Nakabayashi¹, Tatsuo Shimizu¹, Ryosuke Iijima¹ (1.Toshiba R&D center)

Keywords:SiC, oxide, nitridation