Shunsuke Asaba

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Speaker, Author, Co-Author

Tue. Mar 20, 2018 9:00 AM - 12:00 PM D103 (56-103)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20a-D103-1~11] 15.6 Group IV Compound Semiconductors (SiC)

11:30 AM - 11:45 AM

△ [20a-D103-10] The interface nitridation process by high temperature annealing in N₂ ambient for insulator on Si face SiC and its effect on defect reduction

〇Shunsuke Asaba¹, Toshihide Ito¹, Shigeto Fukatsu¹, Yukio Nakabayashi¹, Tatsuo Shimizu¹, Ryosuke Iijima¹ (1.Toshiba R&D center)