Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20a-D103-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Mar 20, 2018 9:00 AM - 12:00 PM D103 (56-103)

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9:00 AM - 9:15 AM

[20a-D103-1] High-Temperature Reliability of Ni/Nb Ohmic Contacts on 4H-SiC For Harsh Environment Applications

〇(D)Cuong Van Vuong¹, Ishikawa Seiji^1,2, Sezaki Hiroshi^1,2, Maeda Tomonori^1,2, Koganezawa Tomoyuki³, Ohshima Takeshi³, Miyazaki Takamichi⁴, Kuroki Shin-Ichiro¹ (1.RNBS, 2.Phenitec Semicon., 3.JASRI, 4.Tohoku Univ.)

9:15 AM - 9:30 AM

[20a-D103-2] Effect of Ramp Rate on Ohmic Contact Property of n-type 4H-SiC Formed by Silicon-cap Annealing

〇Daichi Todo¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

9:30 AM - 9:45 AM

[20a-D103-3] Dependence of Electrical Properties of Multi-Epitaxial Type SiC SJ Diode on Process Parameter

〇(M2)Minoru Harada¹, Tadao Morimoto², Shinsuke Harada², Noriyuki Iwamuro¹ (1.Tsukuba Univ., 2.AIST)

9:45 AM - 10:00 AM

[20a-D103-4] Ab initio calculations on novel interface states caused by the stacking sequence in SiC/SiO₂ interfaces

〇Yuichiro Matsushita¹, Atsushi Oshiyama¹ (1.The Univ. of Tokyo)

10:00 AM - 10:15 AM

[20a-D103-5] Carbon-related defects in SiO₂: Determination of defect structures and electronic states

〇Yuichiro Matsushita¹, Atsushi Oshiyama¹ (1.The Univ. of Tokyo)

10:15 AM - 10:30 AM

[20a-D103-6] Bonding states of 4H-SiC m-face surface after annealing by H2/N2 gas mixture

〇Atsushi Shioji¹, Takeshi Fujii², Hiroshi Ando¹, Anton Visikovskiy¹, Takashi Kajiwara¹, Satoru Tanaka¹ (1.Kyushu Univ., 2.Fuji Electric.)

10:45 AM - 11:00 AM

[20a-D103-7] Observation of defect distributions at SiO₂/4H-SiC interfaces by high-resolution local deep level transient spectroscopy

〇Yuji Yamagishi¹, Yasuo Cho¹ (1.Tohoku Univ.)

11:00 AM - 11:15 AM

△ [20a-D103-8] Visualizing the Distributions of Interface States Close to the Conduction Band by Local Deep Level Transient Spectroscopy at Low Temperatures (2)

〇Takayuki Abe¹, Yuji Yamagishi¹, Yasuo Cho¹ (1.RIEC, Tohoku Univ.)

11:15 AM - 11:30 AM

△ [20a-D103-9] Consideration of gate insulator on 4H-SiC Si face using a SiNx layer by ALD

〇Teruaki Kumazawa¹, Mituo Okamoto¹, Miwako Iijima¹, Yohei Iwahashi², Shinzi Fujikake¹, Tsuyoshi Araoka³, Tae Tawara¹, Hiroshi Kimura³, Shinsuke Harada¹, Hajime Okumura¹ (1.AIST, 2.Toyota Motor Co., 3.Fuji Electric Co.,Ltd.)

11:30 AM - 11:45 AM

△ [20a-D103-10] The interface nitridation process by high temperature annealing in N₂ ambient for insulator on Si face SiC and its effect on defect reduction

〇Shunsuke Asaba¹, Toshihide Ito¹, Shigeto Fukatsu¹, Yukio Nakabayashi¹, Tatsuo Shimizu¹, Ryosuke Iijima¹ (1.Toshiba R&D center)

11:45 AM - 12:00 PM

▼ [20a-D103-11] XPS study of nitrogen profiles at SiO₂/4H-SiC(0001) interfaces with NO annealing

〇Kidist Moges Ayele¹, Mitsuru Sometani², Takuji Hosoi¹, Takayoshi Shimura¹, Shinsuke Harada², Heiji Watanabe¹ (1.Osaka Univ., 2.AIST)

Session information

[20a-D103-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[20a-D103-1] High-Temperature Reliability of Ni/Nb Ohmic Contacts on 4H-SiC For Harsh Environment Applications

[20a-D103-2] Effect of Ramp Rate on Ohmic Contact Property of n-type 4H-SiC Formed by Silicon-cap Annealing

[20a-D103-3] Dependence of Electrical Properties of Multi-Epitaxial Type SiC SJ Diode on Process Parameter

[20a-D103-4] Ab initio calculations on novel interface states caused by the stacking sequence in SiC/SiO₂ interfaces

[20a-D103-5] Carbon-related defects in SiO₂: Determination of defect structures and electronic states

[20a-D103-6] Bonding states of 4H-SiC m-face surface after annealing by H2/N2 gas mixture

[20a-D103-7] Observation of defect distributions at SiO₂/4H-SiC interfaces by high-resolution local deep level transient spectroscopy

△ [20a-D103-8] Visualizing the Distributions of Interface States Close to the Conduction Band by Local Deep Level Transient Spectroscopy at Low Temperatures (2)

△ [20a-D103-9] Consideration of gate insulator on 4H-SiC Si face using a SiNx layer by ALD

△ [20a-D103-10] The interface nitridation process by high temperature annealing in N₂ ambient for insulator on Si face SiC and its effect on defect reduction

▼ [20a-D103-11] XPS study of nitrogen profiles at SiO₂/4H-SiC(0001) interfaces with NO annealing

Authentication

Session information

[20a-D103-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[20a-D103-1] High-Temperature Reliability of Ni/Nb Ohmic Contacts on 4H-SiC For Harsh Environment Applications

[20a-D103-2] Effect of Ramp Rate on Ohmic Contact Property of n-type 4H-SiC Formed by Silicon-cap Annealing

[20a-D103-3] Dependence of Electrical Properties of Multi-Epitaxial Type SiC SJ Diode on Process Parameter

[20a-D103-4] Ab initio calculations on novel interface states caused by the stacking sequence in SiC/SiO2 interfaces

[20a-D103-5] Carbon-related defects in SiO2: Determination of defect structures and electronic states

[20a-D103-6] Bonding states of 4H-SiC m-face surface after annealing by H2/N2 gas mixture

[20a-D103-7] Observation of defect distributions at SiO2/4H-SiC interfaces by high-resolution local deep level transient spectroscopy

△ [20a-D103-8] Visualizing the Distributions of Interface States Close to the Conduction Band by Local Deep Level Transient Spectroscopy at Low Temperatures (2)

△ [20a-D103-9] Consideration of gate insulator on 4H-SiC Si face using a SiNx layer by ALD

△ [20a-D103-10] The interface nitridation process by high temperature annealing in N2 ambient for insulator on Si face SiC and its effect on defect reduction

▼ [20a-D103-11] XPS study of nitrogen profiles at SiO2/4H-SiC(0001) interfaces with NO annealing

Authentication

[20a-D103-4] Ab initio calculations on novel interface states caused by the stacking sequence in SiC/SiO₂ interfaces

[20a-D103-5] Carbon-related defects in SiO₂: Determination of defect structures and electronic states

[20a-D103-7] Observation of defect distributions at SiO₂/4H-SiC interfaces by high-resolution local deep level transient spectroscopy

△ [20a-D103-10] The interface nitridation process by high temperature annealing in N₂ ambient for insulator on Si face SiC and its effect on defect reduction

▼ [20a-D103-11] XPS study of nitrogen profiles at SiO₂/4H-SiC(0001) interfaces with NO annealing