Daichi Todo

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Speaker, Author, Co-Author

Tue. Mar 20, 2018 9:00 AM - 12:00 PM D103 (56-103)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20a-D103-1~11] 15.6 Group IV Compound Semiconductors (SiC)

9:15 AM - 9:30 AM

[20a-D103-2] Effect of Ramp Rate on Ohmic Contact Property of n-type 4H-SiC Formed by Silicon-cap Annealing

〇Daichi Todo¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)