Atsushi Shioji

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Speaker, Author, Co-Author

Tue. Mar 20, 2018 9:00 AM - 12:00 PM D103 (56-103)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20a-D103-1~11] 15.6 Group IV Compound Semiconductors (SiC)

10:15 AM - 10:30 AM

[20a-D103-6] Bonding states of 4H-SiC m-face surface after annealing by H2/N2 gas mixture

〇Atsushi Shioji¹, Takeshi Fujii², Hiroshi Ando¹, Anton Visikovskiy¹, Takashi Kajiwara¹, Satoru Tanaka¹ (1.Kyushu Univ., 2.Fuji Electric.)