The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-E201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Mar 20, 2018 9:00 AM - 11:30 AM E201 (57-201)

Takayoshi Oshima(Saga Univ.)

9:00 AM - 9:15 AM

[20a-E201-1] Synchrotron X-ray Topography Observation of Defects in HVPE-Grown Epitaxial Film of β-Ga2O3

Satoshi Masuya1, Kohei Sasaki2,3, Akito Kuramata2,3, Osamu Ueda4 (1.Saga Univ., 2.Novel Crystal Tech., 3.Tamura Corp., 4.Kanazawa Inst. Tech.)

Keywords:Ga2O3, X-ray topography