9:00 AM - 9:15 AM
〇Satoshi Masuya1, Kohei Sasaki2,3, Akito Kuramata2,3, Osamu Ueda4 (1.Saga Univ., 2.Novel Crystal Tech., 3.Tamura Corp., 4.Kanazawa Inst. Tech.)
Oral presentation
21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
Tue. Mar 20, 2018 9:00 AM - 11:30 AM E201 (57-201)
Takayoshi Oshima(Saga Univ.)
△:奨励賞エントリー
▲:英語発表
▼:奨励賞エントリーかつ英語発表
空欄:どちらもなし
9:00 AM - 9:15 AM
〇Satoshi Masuya1, Kohei Sasaki2,3, Akito Kuramata2,3, Osamu Ueda4 (1.Saga Univ., 2.Novel Crystal Tech., 3.Tamura Corp., 4.Kanazawa Inst. Tech.)
9:15 AM - 9:30 AM
〇Hirotaka Yamaguchi1 (1.AIST)
9:30 AM - 9:45 AM
〇Hirotaka Yamaguchi1, Akito KUramata2 (1.AIST, 2.Novel Crystal Tech.)
9:45 AM - 10:00 AM
〇(B)Eitetsu Katagiri1, Tomoya Moribayashi1, Kohei Sasaki2,3, Katsumi Kawasaki4, Jun Hirabayashi4, Akito Kuramata2,3, Makoto Kasu1 (1.Saga Univ., 2.Novel Crystal Tech., 3.Tamura Corp., 4.TDK Corp.)
10:15 AM - 10:30 AM
〇Toshimitsu Ito1, Ozaki Yasuko1, Yasuhide Tomioka1, Hideyuki Watanabe1 (1.AIST)
10:30 AM - 10:45 AM
Lingaparthi Ravikiran1, Yoshiaki Nakata1, Akito Kuramata2, Shigenobu Yamakoshi2, 〇Masataka Higashiwaki1 (1.NICT, 2.Tamura Corp.)
10:45 AM - 11:00 AM
〇Jungsoo Lee1, Ryo Wakabayashi1, Kohei Yoshimatsu1, Motohisa Kado2, Akira Ohtomo1,3 (1.Tokyo Tech., 2.Toyota Motor Corp., 3.MCES)
11:00 AM - 11:15 AM
〇Shinji Nakagomi1, Takashi Yasuda1, Yoshihiro Kokubun1 (1.Ishinomaki Senshu Univ.)
11:15 AM - 11:30 AM
〇Shinji Nakagomi1, Hikaru Sasaki1, Shinya Meguro1, Yoshihiro Kokubun1 (1.Ishinomaki Senshu Univ.)
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