[20a-E201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-E201-6] Structural Analysis of (AlGa)₂O₃ Thin Films on Ga₂O₃ (010) Substrates Grown by RF-MBE

Lingaparthi Ravikiran¹, Yoshiaki Nakata¹, Akito Kuramata², Shigenobu Yamakoshi², 〇Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp.)

Keywords:gallium oxide (Ga2O3), molecular beam epitaxy (MBE), (AlGa)2O3

We have reported developments of Ga₂O₃ transistors and Schottky barrier diodes mainly toward power electronics applications. In this work, with an idea of application to lateral Ga₂O₃ FET as a back barrier in mind, we performed RF-MBE growth of (AlGa)₂O₃ thin films on β-Ga₂O₃ (010) substrates and structural investigation of the films.