[20a-E201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-E201-2] Stacking Faults in β-Ga₂O₃ I. Slip System and Partial Dislocations

〇Hirotaka Yamaguchi¹ (1.AIST)

Keywords:slip system, partial dislocations, Ga2O3

Based on our model of the slip system of β-Ga₂O₃, partial dislocations in the (-201) plane is discussed.