[20a-E201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-E201-3] Stacking Faults in β-Ga₂O₃ II. Observation by X-ray Topography

〇Hirotaka Yamaguchi¹, Akito KUramata² (1.AIST, 2.Novel Crystal Tech.)

Keywords:stacking faults, X-ray topograph, Ga2O3

Planar defects in β-Ga₂O₃ observed in X-ray topographs are analyzed by using partial dislocation models in the (-201) plane.