9:45 AM - 10:00 AM
△ [20a-E201-4] Relationship between crystal defects and leakage current of HVPE (001) β-Ga2O3 Schottky barrier diodes
Keywords:semiconductor, Ga2O3, crystal characterization
Oral presentation
21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
Tue. Mar 20, 2018 9:00 AM - 11:30 AM E201 (57-201)
Takayoshi Oshima(Saga Univ.)
9:45 AM - 10:00 AM
Keywords:semiconductor, Ga2O3, crystal characterization