[20a-E201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [20a-E201-4] Relationship between crystal defects and leakage current of HVPE (001) β-Ga₂O₃ Schottky barrier diodes

〇(B)Eitetsu Katagiri¹, Tomoya Moribayashi¹, Kohei Sasaki^2,3, Katsumi Kawasaki⁴, Jun Hirabayashi⁴, Akito Kuramata^2,3, Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Tech., 3.Tamura Corp., 4.TDK Corp.)

Keywords:semiconductor, Ga2O3, crystal characterization