[20a-E201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-E201-5] Growth of high-quality single crystals of β-Ga₂O₃ by FZ method

〇Toshimitsu Ito¹, Ozaki Yasuko¹, Yasuhide Tomioka¹, Hideyuki Watanabe¹ (1.AIST)

Keywords:beta-Ga2O3, wide-gap semiconductor, crystal growth

We have developed the floating zone (FZ) method for the growth of high-quality β-Ga₂O₃ crystals, which makes noble metal crucibles unnecessary and enables cost reduction, imurity control, and dopant control simultaneously.