10:30 AM - 10:45 AM
[20a-E201-6] Structural Analysis of (AlGa)2O3 Thin Films on Ga2O3 (010) Substrates Grown by RF-MBE
Keywords:gallium oxide (Ga2O3), molecular beam epitaxy (MBE), (AlGa)2O3
We have reported developments of Ga2O3 transistors and Schottky barrier diodes mainly toward power electronics applications. In this work, with an idea of application to lateral Ga2O3 FET as a back barrier in mind, we performed RF-MBE growth of (AlGa)2O3 thin films on β-Ga2O3 (010) substrates and structural investigation of the films.