[20a-E202-1~10] 15.4 III-V-group nitride crystals

[20a-E202-1] Relationship between spatial inhomogeneity of photo-excited carrier distribution and internal quantum efficiency of radiation in GaN single crystals (1)

〇Hidehiro Asai¹, Kazunobu Kojima², Koichi Fukuda¹, Shigefusa Chichibu² (1.AIST, 2.IMRAM-Tohoku Univ.)

Keywords:GaN, Internal quantum efficiency, Carrier diffusion

In this study, we theoretically investigate the relation between internal quantum efficiency (IQE) of radiation and non-uniform photo-excited carrier distribution in GaN single crystals. We analytically calculate the distribution of minority carriers, and demonstrate the analytic solutions agree well with the results of TCAD simulations. Moreover, we investigate the analytic solution for IQE considering the carrier diffusion and the self-absorption.