Relationship between spatial inhomogeneity of photo-excited carrier distribution and internal quantum efficiency of radiation in GaN single crystals (2)

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Tue. Mar 20, 2018 9:00 AM - 11:45 AM E202 (57-202)

Ryota Ishii(Kyoto Univ.), Tomoyuki Tanikawa(Tohoku Univ.)

9:15 AM - 9:30 AM

〇Kazunobu Kojima¹, Hidehiro Asai², Koichi Fukuda², Shigefusa Chichibu¹ (1.IMRAM, Tohoku Univ., 2.AIST)

Keywords:GaN, Internal quantum efficiency