[20a-E202-1~10] 15.4 III-V-group nitride crystals

[20a-E202-4] Evaluation of valence band structure and gap states for III-V nitrides

〇Masatomo Sumiya¹, Kiyotaka Fukuda^1,2, Shigenori Ueda¹, Yuya Asai^1,3, Yujin Cho¹, Takafumi Sekiguchi¹, Akira Uedono³, Onuma Takeyoshi², Liwen Sang¹, Tomohiro Yamaguchi², Toru Honda² (1.NIMS, 2.Kougakuin Univ., 3.Tsukuba Univ.)

Keywords:gap-states, photo-thermal deflection spectroscopy, hard x-ray photoemission spectroscopy

In order to improve the performance and reliability of III-V nitride devices, It is important to understand the relationship among the in-gap state defects, valence band structure and the properties. In this study, we have observed the structure near the valence band maximum by hard x-ray photoemission spectroscopy and detected the in-gap states by photothermal deflection spectroscopy.