The 65h JSAP Spring Meeting, 2018

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15 Crystal Engineering » 15.5 Group IV crystals and alloys

[20a-F214-1~9] 15.5 Group IV crystals and alloys

Tue. Mar 20, 2018 9:45 AM - 12:00 PM F214 (61-214)

Keisuke Arimoto(Univ. of Yamanashi)

11:15 AM - 11:30 AM

[20a-F214-7] Effects of kinds of dopant on heavy doping for Ge1−xSnx layers using pulsed laser annealing in water

〇Kouta Takahashi1,2, Masashi Kurosawa1,3,4, Hiroshi Ikenoue5, Mitsuo Sakashita1, Osamu Nakatsuka1,6, Shigeaki Zaima6 (1.Grad. Sch. of Eng., Nagoya Univ., 2.JSPS, 3.IAR, Nagoya Univ., 4.JST-PRESTO, 5.Dept. of Gigaphoton Next GLP, Grad. Sch. of ISEE, Kyushu Univ., 6.IMaSS, Nagoya Univ.)

Keywords:GeSn, Laser annealing