Tomographic Analysis of Lattice Plane Microstructure in the Depth Direction of High-Ge-Content SiGe Films with Compositionally Graded Layers Using Nanobeam X-Ray Diffraction

Kazuki Shida; Shotaro Takeuchi; Tetsuya Tohei; Yasuhiko Imai; Shigeru Kimura; Andreas Schulze; Matty Caymax; Akira Sakai

Presentation information

Oral presentation

15 Crystal Engineering » 15.5 Group IV crystals and alloys

[20a-F214-1~9] 15.5 Group IV crystals and alloys

Tue. Mar 20, 2018 9:45 AM - 12:00 PM F214 (61-214)

Keisuke Arimoto(Univ. of Yamanashi)

11:30 AM - 11:45 AM

△ [20a-F214-8] Tomographic Analysis of Lattice Plane Microstructure in the Depth Direction of High-Ge-Content SiGe Films with Compositionally Graded Layers Using Nanobeam X-Ray Diffraction

〇Kazuki Shida¹, Shotaro Takeuchi¹, Tetsuya Tohei¹, Yasuhiko Imai², Shigeru Kimura², Andreas Schulze³, Matty Caymax³, Akira Sakai¹ (1.Osaka Univ., 2.JASRI, 3.imec)

Keywords:nanobeam X-ray diffraction, high-Ge-content SiGe, compositionally graded layer