[20p-C304-1~15] 22.1 Joint Session M "Phonon Engineering"

△ [20p-C304-8] Ballistic heat transport in SiGe nanowires

〇(M1)Noboru Okamoto¹, Ryoto Yanagisawa¹, Mahfuz Alam², Kentaro Sawano², Masahiro Nomura^1,3,4 (1.IIS Univ. of Tokyo, 2.Univ. of Tokyo City, 3.NanoQuine Univ. of Tokyo, 4.JST PRESTO)

Keywords:phonon, nanowire, Silicon Germanium

In recent years, the development of processing technology at the nanoscale enable us to observe new physics in heat conduction, and one of them is ballistic heat transport. Ballistic heat transport has been reported in the CVD grown SiGe nanowire structure where thermal phonons have the long mean free path of several tens of μm. However, in order to realize ballistic heat transport at room temperature, smooth interfaces and high crystallinity for suppressing diffusive scattering are required. In this study, we report ballistic heat transport at room temperature in SiGe nanowires fabricated by top down processing using RIE.