[20p-D103-1~14] 15.6 Group IV Compound Semiconductors (SiC)

[20p-D103-11] Temperature dependent recovery of PBT-stressed SiC-MOSFETs

Tohru Akiyoshi¹, Yusuke Harada¹, Fukuda Tatsuya¹, 〇Eiichi Murakami¹ (1.Kyushu Sangyo Univ.)

Keywords:SiC-MOSFET, PBTI, tunneling front model

Recovery characteristics of PBT-stressed SiC-MOSFETs are examined by changing stress and recovery temperature independently. Higher recovery temperature results in faster recovery meaning thermal activation. Higher stress temperature results in slower recovery suggesting thermal stabilization of electron-capture state. In addition, the tunneling front model is applied to model log(t) dependence and to estimate the activation energy of the recovery.