The 65h JSAP Spring Meeting, 2018

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20p-D103-1~14] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Mar 20, 2018 1:15 PM - 5:00 PM D103 (56-103)

Yasuto Hijikata(Saitama Univ.), Wakana Takeuchi(Nagoya Univ.)

4:15 PM - 4:30 PM

[20p-D103-12] Research on 4H-SiC Trench pMOSFETs for High-Frequency CMOS inverter

〇(M1)Jun Inoue1, Shin-Ichro Kuroki1, Seiji Ishikawa2, Tomonori Maeda2, Hiroshi Sezaki2, Takahiro Makino3, Takeshi Ohshima3, Mikael Ostling4, Carl-Mikael Zetterling4 (1.Hiroshima Univ. Nanodevice, 2.Phenitec Semicondudtor, 3.QST, 4.KTH)

Keywords:semicouductor, SiC